India’s Semiconductor Mission gets ₹4,600 cr boost as Modi govt approves 4 new projects

Let’s understand these companies, what specific components they will manufacture, and their key applications.

SicSem Private Ltd is collaborating with Clas-SiC Wafer Fab Ltd., UK, to establish an integrated facility of silicon carbide (SiC) based compound semiconductors in Info Valley, Bhubaneshwar, Odisha. This will be 1st commercial compound factory in the country. The project proposes to manufacture silicon carbide devices. The semiconductor fab will have an annual capacity of 60,000 wafers and a packaging capacity of 96 million units. The proposed products will have applications in missiles, defence equipment, electric vehicles (EVs), railway, fast chargers, data centre racks, consumer appliances, and solar power inverters.

3D Glass Solutions Inc. (3DGS) will be setting up a vertically integrated advanced packaging and embedded glass substrate unit in Info Valley, Bhubaneshwar, Odisha. The unit will bring the world’s most advanced packaging technology to India, thereby improving efficiency. The facility will have a large variety of advanced technologies, including glass interposers with passives and silicon bridges, and 3D Heterogeneous Integration (3DHI) modules. Planned capacity of this unit will be around 69,600 glass panel substrates, 50 million assembled units, and 13,200 3DHI modules per annum. The proposed products will have significant applications in defence, high-performance computing, artificial intelligence, RF and automotive, photonics and co-packaged optics, etc.

Advanced System in Package Technologies (ASIP) will set up a semiconductor manufacturing unit in Andhra Pradesh, under a technology tie-up with APACT Co. Ltd, South Korea, with an annual capacity of 96 million units. The manufactured products will find applications in mobile phones, set-top boxes, automobile applications, and other electronic products.

Continental Device Ltd (CDIL) will expand its discrete semiconductor manufacturing facility at Mohali, Punjab. The proposed facility will manufacture high-power discrete semiconductor devices such as MOSFETs, IGBTs, Schottky Bypass Diodes, and transistors, both in silicon and silicon carbide. The annual capacity of this brownfield expansion will be to the tune of 158.38 million units. The devices manufactured by these proposed units will have applications in automotive electronics, including EVs and their charging infrastructure, renewable energy systems, power conversion applications, industrial applications and communication infrastructure.